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Time resolved measurements which isolate the mechanisms responsible for terahertz glory scattering from dielectric spheres
(American Physical Society, 1998-01-12)
The surface-wave scattering processes responsible, in part, for the optical glory have never been compared with theoretical predictions. Here, THz impulse ranging is used to measure the time domain impulse response of ...
THz spectroscopy and source characterization by optoelectronic interferometry
(AIP Publishing, 1992-03-02)
We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high-resistivity GaAs from 1 to 5 THz. ...
THz time-domain spectroscopy of high Tc substrates
(AIP Publishing, 1990-09-03)
Using the method of time-domain spectroscopy, we have measured the absorption and dispersion from 0.2 to 2 THz of the high Tc substrates, magnesium oxide, yttria-stabilized zirconia (YSZ), and lanthanum aluminate. Our ...
Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors
(Optical Society of America, 1990-10)
Using the method of time-domain spectroscopy, we measure the far-infrared absorption and dispersion from 0.2 to 2 THz of the crystalline dielectrics sapphire and quartz, fused silica, and the semiconductors silicon, gallium, ...
Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
(AIP Publishing, 1991-04-08)
Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad-band optoelectronic terahertz beam system, we have generated and detected freely propagating, subpicosecond electromagnetic ...
Carrier dynamics of electrons and holes in moderately doped silicon
(American Physical Society, 1990-06-15)
A time-domain spectroscopic technique, based on the generation and detection of a collimated beam of subpicosecond broadband terahertz pulses, is used to measure the absorption and dispersion of n- and p-type silicon, with ...
Experimental time-domain study of THz signals from impulse excitation of a horizontal surface dipole
(AIP Publishing, 1999-03-22)
Using optoelectronic techniques with sub-ps resolution, we have characterized the electric-field time-domain response from an impulsively excited, micron-sized dipole antenna on a dielectric surface. When detected by an ...
Optical and electronic properties of doped silicon from 0.1 to 2 THz
(AIP Publishing, 1990-04-23)
Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N- and P-type, 1 ohm-cm silicon from 0.1 to 2 THz. These results give the corresponding ...
Measurements of the THz absorption and dispersion of ZnTe and their relevance to the electro-optic detection of THz radiation
(AIP Publishing, 1999-06-07)
Via THz time-domain spectroscopy, we have measured the absorption and index of refraction of single-crystal (110) ZnTe from 0.3 to 4.5 THz. We find that the absorption is dominated by two lower-frequency phonon lines at ...
Time domain terahertz impulse ranging studies
(AIP Publishing, 1995-10-02)
We present time domain impulse scattering measurements of freely propagating terahertz radiation measured with subpicosecond resolution. This fast time response corresponds to a usable bandwidth of over I THz. Measured ...