Optical and electronic properties of doped silicon from 0.1 to 2 THz
Abstract
Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N- and P-type, 1 ohm-cm silicon from 0.1 to 2 THz. These results give the corresponding frequency-dependent complex conductance over the widest frequency range to date. The data provide and a complete view on the dynamics of both electrons and holes and are well fit by the simple Drude relationship.
DOI
10.1063/1.103120Citation
van Exter, M., & Grischkowsky, D. (1990). Optical and electronic properties of doped silicon from 0.1 to 2 THz. Applied Physics Letters, 56(17), 1694-1696. https://doi.org/10.1063/1.103120