| dc.contributor.author | van Exter, Martin | |
| dc.contributor.author | Grischkowsky, D. | |
| dc.date.accessioned | 2015-10-16T20:48:07Z | |
| dc.date.available | 2015-10-16T20:48:07Z | |
| dc.date.issued | 1990-04-23 | |
| dc.identifier | okds_Grischkowsky_APL_1990-04-23 | |
| dc.identifier.citation | van Exter, M., & Grischkowsky, D. (1990). Optical and electronic properties of doped silicon from 0.1 to 2 THz. Applied Physics Letters, 56(17), 1694-1696. https://doi.org/10.1063/1.103120 | |
| dc.identifier.uri | https://hdl.handle.net/11244/19854 | |
| dc.description.abstract | Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N- and P-type, 1 ohm-cm silicon from 0.1 to 2 THz. These results give the corresponding frequency-dependent complex conductance over the widest frequency range to date. The data provide and a complete view on the dynamics of both electrons and holes and are well fit by the simple Drude relationship. | |
| dc.format | application/pdf | |
| dc.language | en_US | |
| dc.publisher | AIP Publishing | |
| dc.rights | This material has been previously published. In the Oklahoma State University Library's institutional repository this version is made available through the open access principles and the terms of agreement/consent between the author(s) and the publisher. The permission policy on the use, reproduction or distribution of the material falls under fair use for educational, scholarship, and research purposes. Contact Digital Resources and Discovery Services at lib-dls@okstate.edu or 405-744-9161 for further information. | |
| dc.title | Optical and electronic properties of doped silicon from 0.1 to 2 THz | |
| osu.filename | okds_Grischkowsky_APL_1990-04-23.pdf | |
| dc.description.peerreview | Peer reviewed | |
| dc.identifier.doi | 10.1063/1.103120 | |
| dc.description.department | Electrical and Computer Engineering | |
| dc.type.genre | Article | |
| dc.type.material | Text | |
