Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
Date
1991-04-08Author
Warren, A. C.
Katzenellenbogen, N.
Grischkowsky, D.
Woodall, J. M.
Melloch, M. R.
Otsuka, N.
Metadata
Show full item recordAbstract
Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad-band optoelectronic terahertz beam system, we have generated and detected freely propagating, subpicosecond electromagnetic pulses. The receiver signal gave a measured integrated pulse width of 0. 71 ps. Fast photoconductive rise times have been achieved which are characteristic of good mobility GaAs. In addition, the material exhibits a short "effective" carrier lifetime of several ps due to the embedded, closely spaced (about 20 nm) arsenic precipitates.
DOI
10.1063/1.105162Citation
Warren, A. C., Katzenellenbogen, N., Grischkowsky, D., Woodall, J. M., Melloch, M. R., & Otsuka, N. (1991). Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers. Applied Physics Letters, 58(14), 1512-1514. https://doi.org/10.1063/1.105162