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Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
(AIP Publishing, 1991-04-08)
Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad-band optoelectronic terahertz beam system, we have generated and detected freely propagating, subpicosecond electromagnetic ...
Efficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal-semiconductor interface
(AIP Publishing, 1991-01-21)
We have demonstrated a new method of generating pulses of freely propagating THz electromagnetic radiation. The resulting 380 fs pulses are the shortest directly measured THz pulses in free space to date and are more ...
Electrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy
(AIP Publishing, 1992-08-17)
Using a high-performance optoelectronic THz beam system for time-domain spectroscopy, we have measured the absorption and index of refraction of N- and P-type doped GaAs from low frequencies to 4 THz. From these measurements ...
Line-shape transition of collision broadened lines
(American Physical Society, 1995-02-20)
Using the newly developed technique of THz time-domain spectroscopy, we have measured the far-wing absorption line profile of the ensemble of collision broadened ground state rotational lines of methylchloride vapor out ...