Electrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy
Abstract
Using a high-performance optoelectronic THz beam system for time-domain spectroscopy, we have measured the absorption and index of refraction of N- and P-type doped GaAs from low frequencies to 4 THz. From these measurements the complex conductance was obtained over the same frequency range. All of the results were well fit by Drude theory.
DOI
10.1063/1.107762Citation
Katzenellenbogen, N., & Grischkowsky, D. (1992). Electrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy. Applied Physics Letters, 61(7), 840-842. https://doi.org/10.1063/1.107762