| dc.contributor.author | Katzenellenbogen, N. | |
| dc.contributor.author | Grischkowsky, D. | |
| dc.date.accessioned | 2015-10-16T20:48:08Z | |
| dc.date.available | 2015-10-16T20:48:08Z | |
| dc.date.issued | 1992-08-17 | |
| dc.identifier | okds_Grischkowsky_APL_1992-08-17 | |
| dc.identifier.citation | Katzenellenbogen, N., & Grischkowsky, D. (1992). Electrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy. Applied Physics Letters, 61(7), 840-842. https://doi.org/10.1063/1.107762 | |
| dc.identifier.uri | https://hdl.handle.net/11244/19860 | |
| dc.description.abstract | Using a high-performance optoelectronic THz beam system for time-domain spectroscopy, we have measured the absorption and index of refraction of N- and P-type doped GaAs from low frequencies to 4 THz. From these measurements the complex conductance was obtained over the same frequency range. All of the results were well fit by Drude theory. | |
| dc.format | application/pdf | |
| dc.language | en_US | |
| dc.publisher | AIP Publishing | |
| dc.rights | This material has been previously published. In the Oklahoma State University Library's institutional repository this version is made available through the open access principles and the terms of agreement/consent between the author(s) and the publisher. The permission policy on the use, reproduction or distribution of the material falls under fair use for educational, scholarship, and research purposes. Contact Digital Resources and Discovery Services at lib-dls@okstate.edu or 405-744-9161 for further information. | |
| dc.title | Electrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy | |
| osu.filename | okds_Grischkowsky_APL_1992-08-17.pdf | |
| dc.description.peerreview | Peer reviewed | |
| dc.identifier.doi | 10.1063/1.107762 | |
| dc.description.department | Electrical and Computer Engineering | |
| dc.type.genre | Article | |
| dc.type.material | Text | |
