Investigations Into Selective Laser Melting of Silicon Carbide-Silicon Dioxide Ceramic Composites

dc.contributor.advisorLiu, Yingtao
dc.contributor.authorBrownlee, Sean
dc.contributor.committeeMemberGarg, Jivtesh
dc.contributor.committeeMemberBillings, Christopher
dc.date.accessioned2024-08-13T14:43:08Z
dc.date.available2024-08-13T14:43:08Z
dc.date.issued2024-08-01
dc.date.manuscript2024-07-02
dc.description.abstractThis investigative thesis explores the potential of leveraging Selective Laser Melting (SLM) with silicon-based ceramic substrates to form three-dimensional silicon-based glass-ceramic composite parts. A Selective Laser Processing (SLP) machine was developed to conduct experimental research. The machine was utilized to study the effects of silicon dioxide (SiO2) additive in silicon carbide (SiC) substrates as well as the effect of Scanning Energy (SED) on resulting fabricated line widths and fabricated line uniformity. Preliminary and experimental fabricated line width prediction models as functions of SED, substrate SiC content, and scale of SiO2 particulate additive in the substrate were created. The machine was also utilized to study the effects of SED and scanning strategy on defect formation in fabricated square specimens. It was found that by SLM, melt pool formation and melt pool solidification occurred in substrates containing primarily SiC. Additionally, successful bonding of joints, common in SLM of three-dimensional components, was demonstrated. The exact chemical composition of the final fabricated specimens remained unclear; however, some evidence pointed to the subversion of sublimation of SiC in standard atmosphere under rapid heating and cooling cycles. The results provide a platform for future investigations in SLM of SiC and can be used as an impetus for increasing efforts to account for and control the process parameters involved. It is expected that with increased experimental, theoretical, and numerical modeling, as well as increased control of process parameters, the fabrication of three-dimensional components by SLM is possible using SiC substrates.It was found that by SLM, melt pool formation and melt pool solidification does occur in substrates containing primarily SiC. also, successful bonding of joints, common in SLM of three-dimensional components, was demonstrated. The exact chemical composition of the final fabricated specimens remains unclear; however, evidence pointed to the subversion of sublimation of SiC in standard atmosphere under rapid heating and cooling cycles. The results provide a platform for future investigations in SLM of SiC and provide an impetus for increasing efforts to account for and control the process parameters involved. It is expected that with increased experimental, theoretical, and numerical modeling, as well as increased control of process parameters, the fabrication of three-dimensional components by SLM is possible using SiC substrates.en_US
dc.identifier.urihttps://hdl.handle.net/11244/340574
dc.languageen_USen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectAdditive Manufacturingen_US
dc.subjectSelective Laser Meltingen_US
dc.subjectSilicon Carbideen_US
dc.subjectSLMen_US
dc.thesis.degreeMaster of Scienceen_US
dc.titleInvestigations Into Selective Laser Melting of Silicon Carbide-Silicon Dioxide Ceramic Compositesen_US
ou.groupGallogly College of Engineering::School of Aerospace and Mechanical Engineeringen_US
shareok.orcid0009-0009-5304-2283en_US

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