Ultra-low power RF receiver based on double-gate CMOS FinFET technology

Abstract

In this research, design approaches and methodologies were presented to realize the ultra-low power RF receiver front-end circuits. Moderate inversion operation was explored as a possible method of reducing power consumption along with the use of low supply voltage. The research is firstly concentrated on passive and active devices modeling. One of the most commonly used passive devices is on-chip inductor. On-chip spiral inductor model was developed firstly. Compared to the model developed by others, this model can predict the behavior of the inductors with different structural parameters over a board frequency range (from 0.1 to 10 GHz). Then the SOI varactor model was developed based on our measurement and extraction.

Besides the passive devices modeling, a new most promising MOSFET candidate, FinFET, was characterized at GHz frequency range. Based on the measurement results, we found the FinFET transistors did have superior performance over bulk-Si CMOS technology. And an RF circuit model of FinFET was developed followed that, which was published in Electronics Letters. To my best knowledge, this was the first RF FinFET model published world wide at that time. It provides the basic idea about how to model this new structure MOSFET.

Based on the passive and active device models developed, Global Positioning System (GPS) receiver front end circuits were designed and measured. Comparing to the previous designs with the same constrains, the ultra-low power GPS receiver building block circuits in this research have much less power consumption than the best design published before.