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Schottky-based band lineups for refractory semiconductors

dc.contributor.authorWang, M. W.
dc.contributor.authorMcCaldin, J. O.
dc.contributor.authorSwenberg, J. F.
dc.contributor.authorMcGill, T. C.
dc.contributor.authorHauenstein, R. J.
dc.date.accessioned2018-09-21T17:51:37Z
dc.date.available2018-09-21T17:51:37Z
dc.date.issued1995-04-10
dc.identifieroksd_wang_schottkybasedb_1995
dc.identifier.citationWang, M. W., McCaldin, J. O., Swenberg, J. F., McGill, T. C., & Hauenstein, R. J. (1995). Schottky-based band lineups for refractory semiconductors. Applied Physics Letters, 66(15), 1974-1976. https://doi.org/10.1063/1.113295
dc.identifier.urihttps://hdl.handle.net/11244/301771
dc.description.abstractAn overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted values. Results for tetrahedrally bonded semiconductors with lattice constant values in the range from C through ZnSe are presented. Based on the estimated band alignments and the recently demonstrated p-type dopability of GaN, we propose three novel heterojunction schemes which seek to address inherent difficulties in doping or electrical contact to wide-gap semiconductors such as ZnO, ZnSe, and ZnS.
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dc.languageen_US
dc.publisherAIP Publishing
dc.rightsThis material has been previously published. In the Oklahoma State University Library's institutional repository this version is made available through the open access principles and the terms of agreement/consent between the author(s) and the publisher. The permission policy on the use, reproduction or distribution of the material falls under fair use for educational, scholarship, and research purposes. Contact Digital Resources and Discovery Services at lib-dls@okstate.edu or 405-744-9161 for further information.
dc.titleSchottky-based band lineups for refractory semiconductors
osu.filenameoksd_wang_schottkybasedb_1995.pdf
dc.description.peerreviewPeer reviewed
dc.identifier.doi10.1063/1.113295
dc.description.departmentPhysics
dc.type.genreArticle
dc.type.materialText
dc.subject.keywordszinc oxides
dc.subject.keywordszinc selenides
dc.subject.keywordszinc sulfides
dc.subject.keywordsgallium nitrides
dc.subject.keywordsschottky barrier diodes
dc.subject.keywordsbarrier height
dc.subject.keywordsband structure
dc.subject.keywordsinterface states
dc.subject.keywordsalignment
dc.subject.keywordscrystal doping


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