Schottky-based band lineups for refractory semiconductors
Date
1995-04-10Author
Wang, M. W.
McCaldin, J. O.
Swenberg, J. F.
McGill, T. C.
Hauenstein, R. J.
Metadata
Show full item recordAbstract
An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted values. Results for tetrahedrally bonded semiconductors with lattice constant values in the range from C through ZnSe are presented. Based on the estimated band alignments and the recently demonstrated p-type dopability of GaN, we propose three novel heterojunction schemes which seek to address inherent difficulties in doping or electrical contact to wide-gap semiconductors such as ZnO, ZnSe, and ZnS.
DOI
10.1063/1.113295Citation
Wang, M. W., McCaldin, J. O., Swenberg, J. F., McGill, T. C., & Hauenstein, R. J. (1995). Schottky-based band lineups for refractory semiconductors. Applied Physics Letters, 66(15), 1974-1976. https://doi.org/10.1063/1.113295