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THz spectroscopy and source characterization by optoelectronic interferometry
(AIP Publishing, 1992-03-02)
We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high-resistivity GaAs from 1 to 5 THz. ...
Electrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy
(AIP Publishing, 1992-08-17)
Using a high-performance optoelectronic THz beam system for time-domain spectroscopy, we have measured the absorption and index of refraction of N- and P-type doped GaAs from low frequencies to 4 THz. From these measurements ...