Browsing OSU - Faculty and Staff Publications by Author "van Exter, Martin"

Now showing items 1-4 of 4

    • Carrier dynamics of electrons and holes in moderately doped silicon 

      van Exter, Martin; Grischkowsky, D. (American Physical Society, 1990-06-15)
      A time-domain spectroscopic technique, based on the generation and detection of a collimated beam of subpicosecond broadband terahertz pulses, is used to measure the absorption and dispersion of n- and p-type silicon, with ...

    • Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors 

      Grischkowsky, D.; Keiding, Soren; van Exter, Martin; Fattinger, Ch. (Optical Society of America, 1990-10)
      Using the method of time-domain spectroscopy, we measure the far-infrared absorption and dispersion from 0.2 to 2 THz of the crystalline dielectrics sapphire and quartz, fused silica, and the semiconductors silicon, gallium, ...

    • High-brightness terahertz beams characterized with an ultrafast detector 

      van Exter, Martin; Fattinger, Ch.; Grischkowsky, D. (AIP Publishing, 1989-07-24)
      We have significantly improved the emission and detection of electromagnetic beams of single-cycle 0.5 THz pulses, through the use of new dipolar antenna structures. The frequency response was extended to well beyond the ...

    • Optical and electronic properties of doped silicon from 0.1 to 2 THz 

      van Exter, Martin; Grischkowsky, D. (AIP Publishing, 1990-04-23)
      Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N- and P-type, 1 ohm-cm silicon from 0.1 to 2 THz. These results give the corresponding ...