Search
Now showing items 1-4 of 4
THz time-domain spectroscopy of high Tc substrates
(AIP Publishing, 1990-09-03)
Using the method of time-domain spectroscopy, we have measured the absorption and dispersion from 0.2 to 2 THz of the high Tc substrates, magnesium oxide, yttria-stabilized zirconia (YSZ), and lanthanum aluminate. Our ...
Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors
(Optical Society of America, 1990-10)
Using the method of time-domain spectroscopy, we measure the far-infrared absorption and dispersion from 0.2 to 2 THz of the crystalline dielectrics sapphire and quartz, fused silica, and the semiconductors silicon, gallium, ...
Carrier dynamics of electrons and holes in moderately doped silicon
(American Physical Society, 1990-06-15)
A time-domain spectroscopic technique, based on the generation and detection of a collimated beam of subpicosecond broadband terahertz pulses, is used to measure the absorption and dispersion of n- and p-type silicon, with ...
Optical and electronic properties of doped silicon from 0.1 to 2 THz
(AIP Publishing, 1990-04-23)
Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N- and P-type, 1 ohm-cm silicon from 0.1 to 2 THz. These results give the corresponding ...