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dc.contributor.advisorShi, Zhisheng,en_US
dc.contributor.authorRay, Dewali.en_US
dc.date.accessioned2013-08-16T12:20:33Z
dc.date.available2013-08-16T12:20:33Z
dc.date.issued2007en_US
dc.identifier.urihttps://hdl.handle.net/11244/1149
dc.description.abstractThe research described by this dissertation has focused on the fabrication and design, for the improvement of lead chalcogenide lasers. The ultimate goal was to develop TE-cooled single-mode continuous wave Mid-IR laser for high resolution spectroscopic applications. Processing techniques and procedures as well as theoretical design have been successfully developed that could lead to high temperature single-mode continuous wave (CW) laser operation. Light emitting Pb-salt structures on BaF2 substrate has been examined. An antireflection coating material, for diode-pumped Pb-salt light emitters, that has enhanced room temperature continuous wave light emission has been described. A new surface preparation technology for epi-ready [110] oriented BaF2 substrates and a novel mounting technique for the fabrication of cleaved cavity Pb-salt laser grown on {110} BaF2 was developed. Lasing results from [110] oriented Pb-salt laser fabricated on PbSnSe substrate have been reported for the first time. Theoretical modeling of a Pb-Salt ridge waveguide laser for single lateral mode operation and the development of a fabrication process for the same has been described. A novel fabrication method of cleaved facet Pb-salt laser on as-grown metal substrate for high temperature operation of the device has been described.en_US
dc.format.extentxvii, 202 leaves :en_US
dc.subjectMolecular spectroscopy.en_US
dc.subjectLead chalcogenides.en_US
dc.subjectLasers.en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.titleDevelopment of lead-chalcogenide mid-infrared light emitting devices.en_US
dc.typeThesisen_US
dc.thesis.degreePh.D.en_US
dc.thesis.degreeDisciplineSchool of Electrical and Computer Engineeringen_US
dc.noteSource: Dissertation Abstracts International, Volume: 67-12, Section: B, page: 7280.en_US
dc.noteAdviser: Zhisheng Shi.en_US
ou.identifier(UMI)AAI3245366en_US
ou.groupCollege of Engineering::School of Electrical and Computer Engineering


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