Browsing by Subject "crystal doping"

Now showing items 1-2 of 2

    • Eu-doped CaF2 grown on Si(100) substrates by molecular beam epitaxy 

      Fang, X. M.; Chatterjee, T.; McCann, P. J.; Liu, W. K.; Santos, M. B.; Shan, W.; Song, J. J. (AIP Publishing, 1995-09-25)
      Eu is incorporated into CaF2 films grown on Si(100) by molecular beam epitaxy using elemental Eu evaporation. Eu doping as high as 4.05 at. % does not significantly degrade the surface morphology, indicating a relatively ...

    • Schottky-based band lineups for refractory semiconductors 

      Wang, M. W.; McCaldin, J. O.; Swenberg, J. F.; McGill, T. C.; Hauenstein, R. J. (AIP Publishing, 1995-04-10)
      An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared ...