Browsing by Subject "Pb1-xSnxSe, Lifetime, Resistant-Area Product, Quantum Efficiency, Detectivity"
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Theoretical D* Optimization of N+-p Pb1-xSnxSe Long-Wavelength (8-11 μm) Photovoltaic Detector at 77K
(2014-01)In this work, the study of the influences of lifetime, doping concentration and absorption layer thickness to resistant- area product (R0A) and quantum efficiency of Pb1-xSnxSe photovoltaic detector are presented. Three ...