Theoretical D* Optimization of N+-p Pb1-xSnxSe Long-Wavelength (8-11 μm) Photovoltaic Detector at 77K
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Date
2014-01Author
Weng, Binbin
Qiu, Jijin
Zhao, Lihua
Chang, Caleb
Shi, Zhisheng
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In this work, the study of the influences of lifetime, doping concentration and absorption layer thickness to resistant- area product (R0A) and quantum efficiency of Pb1-xSnxSe photovoltaic detector are presented. Three fundamental current mechanisms including diffusion, generation-recombination, and tunneling models are considered. Using optimal doping concentration and absorption layer thickness parameters, the calculated detectivity (D*) of Pb1-xSnxSe photovoltaic detector is over 1012 cm Hz1/2/W.
Citation
Weng, Binbin, et al. (2014) Theoretical D* Optimization of N+-p Pb1-xSnxSe Long-Wavelength (8-11 μm) Photovoltaic Detector at 77K. Detection, V. 2, No. 1: 1-6.
Sponsorship
We acknowledge financial supports from the DoD AFOSR under Grant No. FA9550-12-1-0451, DoD ARO Grant No. W911NF-07-1-0587, and Oklahoma OCAST program under Grant No. AR112-18 and No. AR132-003.