Browsing by Author "Hauenstein, R. J."
Now showing items 1-2 of 2
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Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures
Bandic, Z. Z.; Hauenstein, R. J.; O'Steen, M. L.; McGill, T. C. (AIP Publishing, 1996)Microscopic growth processes associated with GaN/GaAs molecular beam epitaxy (MBE) are examined through the introduction of a first‐order kinetic model. The model is applied to the electron cyclotron resonance microwave ... -
Schottky-based band lineups for refractory semiconductors
Wang, M. W.; McCaldin, J. O.; Swenberg, J. F.; McGill, T. C.; Hauenstein, R. J. (AIP Publishing, 1995-04-10)An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared ...