MBE GROWTH AND CHARACTERIZATION OF Pb-SALT SEMICONDUCTORS FOR MID-INFRARED DETECTOR AND LASER APPLICATION

Simple item page
dc.contributor.advisorShi, Zhisheng
dc.creatorLi, Donghui
dc.date.accessioned2019-04-27T21:31:44Z
dc.date.available2019-04-27T21:31:44Z
dc.date.issued2009
dc.description.abstractIV-VI semiconductors grown by molecular beam epitaxy (MBE) on various substrates are extensively attractive for mid-infrared optoelectronic device application. The main goal of this research is to improve device performance by lowering defects densities in the epitaxial layers during MBE growth of Pb-salt materials on a lattice-mismatched substrate. Most of the work is based on MBE growth of monocrystalline PbSe on Si (111) substrates. Details of experiments are described and supported by reflection high-energy electron diffraction (RHEED) patterns. The effect of the in-situ surface treatment methods with a motivation of improving electrical and morphological properties of epilayers is demonstrated.
dc.description.abstractA detailed study on surface morphologies and chemical composition of growth pits and dislocations in PbSe epilayers is provided. Various growth defects are investigated by scanning electron microscopy (SEM) and energy-dispersive x-ray analysis (EDXA). Through a series of experimental studies, it has been confirmed that the vast majority of growth pits within PbSe epilayers contains either single or multiple PbSe microcrystals with a distinct cuboid shape.
dc.description.abstractLead salt mid-infrared optoelectronic devices are fabricated on various substrates. Several other research works include: (1) Edge-emitting infrared lasers on BaF2 (110) substrates. A method of substrate transfer from a BaF2 substrate to a copper heat-sink is developed. Pulsed photoluminescence (PL) measurements are conducted with help of Fourier transform infrared (FTIR) spectroscopy method during every single step of device processing. (2) Mid-infrared detectors on silicon (111) substrates. Single-element PbSnSe infrared detectors have been made on CaF2 /Si (111) heterostructures; I-V measurement is accomplished on these detectors.
dc.format.extent128 pages
dc.format.mediumapplication.pdf
dc.identifier99269568402042
dc.identifier.urihttps://hdl.handle.net/11244/318915
dc.languageen_US
dc.relation.requiresAdobe Acrobat Reader
dc.subjectMolecular beam epitaxy
dc.subjectQuantum wells
dc.subjectSolid-state lasers
dc.subjectLaser materials
dc.subjectSemiconductors
dc.thesis.degreePh.D.
dc.titleMBE GROWTH AND CHARACTERIZATION OF Pb-SALT SEMICONDUCTORS FOR MID-INFRARED DETECTOR AND LASER APPLICATION
dc.typetext
dc.typedocument
ou.groupCollege of Engineering::School of Electrical and Computer Engineering

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Li_ou_0169D_10198.pdf
Size:
3.65 MB
Format:
Adobe Portable Document Format
Download

Collections

OU - Dissertations