Hydrogenation of dilute nitride materials for an application to multi-junction solar cells

dc.contributor.authorFukuda, Miwa
dc.contributor.committeeMemberSantos Michael B.
dc.contributor.committeeMemberBumm, Lloyd A.
dc.contributor.committeeMemberSellers, Ian R.
dc.date.accessioned2021-04-05T17:00:12Z
dc.date.available2021-04-05T17:00:12Z
dc.date.created2014
dc.descriptionM.S.--University of Oklahoma, 2014.
dc.descriptionIncludes bibliographical references (leaves 47-52).
dc.description.abstractGalnNAs material has been studied as a candidate for the fourth-layer in multi-junction solar cells. However, the material quality of GalnNAs has inhibited its practical use in commercial photovoltaics. While improvements in GalnNAs material using rapid thermal annealing and hydrogenation have been reported, in this thesis, the main focus is on 1he effects of hydrogenation on GalnNAs solar cells. The selective passivation impurities/defects and nitrogen-nitrogen clusters by hydrogenation in GalnNAs bulk and solar cell samples is presented. A comparison of reference and hydrogenated solar cells show improvements in the material quality and device performance after passivation.
dc.format.extentxii, 55 leaves
dc.format.mediumxii, 55 leaves : color illustrations ; 28 cm
dc.identifier.urihttps://hdl.handle.net/11244/329090
dc.language.isoeng
dc.subject.lcshSolar cells
dc.subject.lcshNitrides
dc.subject.lcshSemiconductors--Materials
dc.titleHydrogenation of dilute nitride materials for an application to multi-junction solar cells
dc.typeText
ou.groupHomer L. Dodge Department of Physics and Astronomy

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