Indium Arsenide/Gallium Arsenide Antimonide Quantum Dots and Their Applications in Intermediate Band Solar Cells

dc.contributor.advisor	Sellers, Ian
dc.contributor.author	Meleco, Anthony
dc.contributor.committeeMember	Bumm, Lloyd
dc.contributor.committeeMember	McCann, Patrick
dc.date.accessioned	2016-06-27T18:56:25Z
dc.date.available	2016-06-27T18:56:25Z
dc.date.issued	2016-05-13
dc.date.manuscript	2016-05-13
dc.description.abstract	This thesis briefly presents the current energy production landscape and where photovoltaics stand relative to other technologies. The history of the field is introduced as well as current research - most notably third generation solar cell technologies and their potential to lead to higher efficiencies and lower cost compared to today’s dominant crystalline silicon technologies. Quantum dot intermediate band solar cells (QD IBSCs), in particular, are examined as well as experimental results of four InAs/GaAs¬.86Sb.14 QD IBSCs. InAs QDs have potential, but due to material quality of the main material system, show no evidence of an isolated intermediate band and quantum confinement, a necessary component of a workable IBSC	en_US
dc.identifier.uri	http://hdl.handle.net/11244/42984
dc.language	en_US	en_US
dc.subject	solar cells	en_US
dc.subject	intermediate band solar cells	en_US
dc.subject	quantum dot solar cells	en_US
dc.thesis.degree	Master of Science	en_US
dc.title	Indium Arsenide/Gallium Arsenide Antimonide Quantum Dots and Their Applications in Intermediate Band Solar Cells	en_US
ou.group	College of Engineering::Department of Engineering Physics	en_US