Synthesis of Two-Dimensional Hexagonal Boron Nitride by Chemical Vapor Deposition

Abstract

Two-dimensional hexagonal boron nitride (2D hBN) is a single - atom thick layer (monolayer) of alternating boron and nitrogen atoms, which is of great interest and potential due to its excellent electrical, optical, and mechanical properties and isostructural to graphene. In order to fully utilize the potential of 2D hBN, wide area processing of high quality 2D hBN is of utmost importance. As of now, chemical vapor deposition (CVD) is the most promising method to synthesize 2D hBN because it provides great control on the thickness of deposited films (number of layers) and is the best candidate for industrial scale-up processes. Therefore, a CVD system was designed for synthesis of two-dimensional hexagonal boron nitride with low (UHV, LPCVD) and atmospheric pressure (APCVD) operation capabilities and solid and liquid precursor delivery system. This customized CVD system is also capable of synthesizing other 2D materials like graphene and molybdenum disulfide since it can incorporate different types of precursors and reaction gases. This presentation reviews the state-of-the-art research on 2D materials, especially for hBN and explores the CVD aspects of hBN synthesis with a specific focus on the designed CVD reactor system and its components. Preliminary results on the synthesis of 2D hBN will also be presented.