Improving Device Performance of Type-II Interband Cascade Lasers with Room Temperature Emission Wavelengths below 3 µm

dc.contributor.authorShen, Yixuan
dc.contributor.authorYang, Rui Q.
dc.contributor.authorMishima, Tetsuya D.
dc.contributor.authorSantos, Michael B.
dc.contributor.authorWang, Xiaojun
dc.date.accessioned2026-09-21T18:25:38Z
dc.date.issued2025-10-07
dc.description.abstractWe report the demonstration of hybrid-cladding interband cascade lasers (ICLs) for a room temperature emission wavelength range from 2.68 to 2.9 μm. Their threshold current density and threshold input power density are substantially lower than previously reported values from superlattice-cladding ICLs at similar wavelengths. These ICLs were able to operate in pulsed modes at temperatures close to 400 K. At 300 K, the threshold current density was as low as 191 A/cm2 with a threshold input power density of 693 W/cm2. Narrow ridge devices lased in a continuous wave (cw) mode at room temperature and above with threshold current density and output power that are improved compared to previous ICLs at similar wavelengths. Comparative studies of devices with different local material qualities from the same wafer and different wafers revealed a certain correlation between Shockley–Read–Hall recombination and threshold current density, which shed light on understanding the degradation of device performance with the shortening of the lasing wavelength of type-II ICLs. Additionally, negative differential conductance features were observed under reverse bias voltage, which may provide an interesting and potentially useful means to examine the material and fabrication qualities of devices with some extended applications.
dc.description.notes© 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC) license (https://creativecommons.org/licenses/by-nc/4.0/).
dc.description.peerreviewYes
dc.identifier.citationYixuan Shen, Rui Q. Yang, Tetsuya D. Mishima, Michael B. Santos, Xiaojun Wang; Improving device performance of type-II interband cascade lasers with room temperature emission wavelengths below 3 μm. J. Appl. Phys. 7 October 2025; 138 (13): 133103. https://doi.org/10.1063/5.0286553
dc.identifier.doi10.1063/5.0286553
dc.identifier.urihttps://shareok.org/handle/11244/343076
dc.languageen_US
dc.publisherAIP
dc.relation.ispartofJournal of Applied Physics
dc.relation.ispartofseries138(13)
dc.relation.urihttps://pubs.aip.org/aip/jap/article/138/13/133103/3365792/Improving-device-performance-of-type-II-interband
dc.rightsAttribution 4.0 International
dc.subjectSuperlattices
dc.subjectSemiconductor heterostructures
dc.subjectCurrent-voltage characteristic
dc.subjectQuantum wells
dc.subjectOptical waveguides
dc.subjectSemiconductor lasers
dc.subjectResonant tunneling
dc.titleImproving Device Performance of Type-II Interband Cascade Lasers with Room Temperature Emission Wavelengths below 3 µm
dc.typeArticle
ou.groupDodge Family College of Arts and Sciences::Gallogly College of Engineering

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