Quasi two-dimensional accumulation layer on n--type InAs in tipped magnetic fields /

dc.contributor.authorNealon, Michael J.,en_US
dc.date.accessioned2013-08-16T12:29:18Z
dc.date.available2013-08-16T12:29:18Z
dc.date.issued1984en_US
dc.description.abstractWith the magnetic field parallel to the surface, non-periodic structure in the transconductance is observed and attributed to the total depopulation of the subbands as they are pushed up in energy above the Fermi level. As the sample temperature is increased the amplitude of this structure decreases, which allows a measurement of the subband energy.en_US
dc.description.abstractThe electron gas formed at the surface of an n-type InAs MOSFET is quasi two-dimensional. The period in inverse magnetic field strength of the Shubnikov-de Haas oscillations allows a determination of the 2D subband number density. Tipping the magnetic field away from the surface normal decreases the subband population: the component of the magnetic field parallel to the accumulation layer raises the subband energies, hence depopulating the excited states, and the perpendicular field component gives rise to the SdH oscillations from which the population can be determined.en_US
dc.description.abstractAlso observed in our data is the magnetic freeze-out of 2D impurity band conduction at the oxide-semiconductor interface.en_US
dc.format.extentix, 120 leaves :en_US
dc.identifier.urihttp://hdl.handle.net/11244/5300
dc.noteSource: Dissertation Abstracts International, Volume: 45-10, Section: B, page: 3268.en_US
dc.subjectIndium arsenide.en_US
dc.subjectPhysics, Condensed Matter.en_US
dc.subjectElectron gas.en_US
dc.thesis.degreePh.D.en_US
dc.thesis.degreeDisciplineHomer L. Dodge Department of Physics and Astronomyen_US
dc.titleQuasi two-dimensional accumulation layer on n--type InAs in tipped magnetic fields /en_US
dc.typeThesisen_US
ou.groupCollege of Arts and Sciences::Homer L. Dodge Department of Physics and Astronomy
ou.identifier(UMI)AAI8500627en_US

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