Antimony-based III-V semiconductors are getting increasing attention for device applications and fundamental research thanks to advances made in their growth and understanding of their properties. InSb with its extremely small effective mass (0.015me), large Lande g-factor (-51), and strong spin-orbit effects is poised to be a top contender amongst materials of choice for the exciting field of spintronics. To fully harvest the potentials of this material, the nature of dominant interactions and their dependence on various parameters should be understood, and the processing technology of InSb brought to maturity. We made steady steps towards meeting these goals by investigating level crossings in InSb-based quantum wells under tilted magnetic fields, and developing a reliable gating procedure for these heterostructures.

Experimental observation of quantum Hall ferromagnetic states are reported and the influence of applied magnetic fields, sample tilt angle, temperature, carrier density as well as other experimental conditions on these states are presented.