dc.contributor.advisor | McCann, Patrick John, | en_US |
dc.contributor.author | Chatterjee, Tathagata. | en_US |
dc.date.accessioned | 2013-08-16T12:29:55Z | |
dc.date.available | 2013-08-16T12:29:55Z | |
dc.date.issued | 1998 | en_US |
dc.identifier.uri | https://hdl.handle.net/11244/5577 | |
dc.description.abstract | An indirect band-gap precludes the possibility of efficient luminescence from Si. The widespread use of Si in electronics and rapid advances in Si device processing and design justifies the search for Si-based light emitters which can pave the way for Si-based opto-electronics. In this work, the molecular-beam-epitaxy (MBE) growth and characterization of Eu:CaF$\sb2$/Si(100) layers is presented and an electroluminescent device fabricated from this materials system is demonstrated. The MBE growth of the Eu:CaF$\sb2$ layers was carried out in an Intevac MOD GEN-II system. The post-growth surface ordering of Eu:CaF$\sb2$ was studied in situ by monitoring reflection-high-energy-electron-diffraction (RHEED) patterns. The surface morphology of the Eu:CaF$\sb2$ layers was studied ex situ using atomic-force-microscopy (AFM). X-ray photoelectron spectroscopy (XPS) was used to study the effect of high Eu content in the Eu:CaF$\sb2$ layers. Photoluminescence (PL) studies showed that up to 8.0 atomic % Eu can be incorporated into the MBE-grown layers without reduction in the integrated PL intensity at 10 K and 293 K from the Eu$\sp{2+}$ ions. The electrical properties of Eu:CaF$\sb2$ layers were inferred from the analysis of current-versus voltage and high-frequency capacitance versus voltage measurements on metal-insulator-semiconductor (MIS) structures fabricated from these layers. Visible electroluminescence: (EL) is observed at room temperature by current injection into MBE-grown Eu:CaF$\sb2$ layers containing 7.5 and 8.0 atomic percent Eu. The EL spectra are broad with peaks a pound 600 and 700 nm. The ability to generate EL using relatively small DC voltages makes this system promising for Si-based opto-electronics and display applications. | en_US |
dc.format.extent | 94 leaves : | en_US |
dc.subject | Europium. | en_US |
dc.subject | Light emitting diodes. | en_US |
dc.subject | Engineering, Electronics and Electrical. | en_US |
dc.subject | Silicon Electric properties. | en_US |
dc.subject | Luminescence spectroscopy. | en_US |
dc.subject | Engineering, Materials Science. | en_US |
dc.subject | Physics, Condensed Matter. | en_US |
dc.subject | Molecular beam epitaxy. | en_US |
dc.title | Molecular beam epitaxial growth and characterization of europium-doped calcium fluoride and fabrication of visible electroluminescent devices on silicon. | en_US |
dc.type | Thesis | en_US |
dc.thesis.degree | Ph.D. | en_US |
dc.thesis.degreeDiscipline | School of Electrical and Computer Engineering | en_US |
dc.note | Adviser: Patrick John McCann. | en_US |
dc.note | Source: Dissertation Abstracts International, Volume: 58-12, Section: B, page: 6721. | en_US |
ou.identifier | (UMI)AAI9817709 | en_US |
ou.group | College of Engineering::School of Electrical and Computer Engineering | |