Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures

Abstract

Microscopic growth processes associated with GaN/GaAs molecular beam epitaxy (MBE) are examined through the introduction of a first‐order kinetic model. The model is applied to the electron cyclotron resonance microwave plasma‐assisted MBE (ECR‐MBE) growth of a set of δ‐GaNyAs1−y/GaAs strained‐layer superlattices that consist of nitrided GaAs monolayers separated by GaAs spacers, and that exhibit a strong decrease of y with increasing T over the range 540–580 °C. This y(T) dependence is quantitatively explained in terms of microscopic anion exchange, and thermally activated N surface‐desorption and surface‐segregation processes. N surface segregation is found to be significant during GaAs overgrowth of GaNyAs1−y layers at typical GaN ECR‐MBE growth temperatures, with an estimated activation energy Es∼0.9 eV. The observed y(T) dependence is shown to result from a combination of N surface segregation/desorption processes.