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dc.contributor.authorAzad, Abul K.
dc.contributor.authorZhao, Y.
dc.contributor.authorZhang, W.
dc.date.accessioned2018-09-21T17:51:40Z
dc.date.available2018-09-21T17:51:40Z
dc.date.issued2005-03-30
dc.identifieroksd_azad_transmissionpro_2005
dc.identifier.citationAzad, A. K., Zhao, Y., & Zhang, W. (2005). Transmission properties of terahertz pulses through an ultrathin subwavelength silicon hole array. Applied Physics Letters, 86(14), Article 141102. https://doi.org/10.1063/1.1897842
dc.identifier.urihttps://hdl.handle.net/11244/301777
dc.description.abstractWe demonstrate extraordinary THz transmission of an array of subwavelength apertures patterned on ultrathin highly doped silicon by reactive ion etching. The zero-order transmission spectra exhibit well-defined maxima and minima which are attributed to the excitation of surface-plasmon polaritons and Wood's anomaly. The transmission anisotropy is investigated with respect to the orientation of the elliptical hole array in the frequency range from 0.2 to 3.5 THz, and we notice that the transmission increases significantly when the major axis of the elliptical hole is perpendicular to the polarization of THz beam. In addition, redshift and reduction in transmission amplitude are observed when the surrounding dielectric permittivity is increased.
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dc.languageen_US
dc.publisherAIP Publishing
dc.rightsThis material has been previously published. In the Oklahoma State University Library's institutional repository this version is made available through the open access principles and the terms of agreement/consent between the author(s) and the publisher. The permission policy on the use, reproduction or distribution of the material falls under fair use for educational, scholarship, and research purposes. Contact Digital Resources and Discovery Services at lib-dls@okstate.edu or 405-744-9161 for further information.
dc.titleTransmission properties of terahertz pulses through an ultrathin subwavelength silicon hole array
osu.filenameoksd_azad_transmissionpro_2005.pdf
dc.description.peerreviewPeer reviewed
dc.identifier.doi10.1063/1.1897842
dc.description.departmentElectrical and Computer Engineering
dc.type.genreArticle
dc.type.materialText


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