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dc.contributor.authorLin, X.
dc.contributor.authorHe, X. B.
dc.contributor.authorYang, T. Z.
dc.contributor.authorGuo, W.
dc.contributor.authorShi, D. X.
dc.contributor.authorGao, H.-J.
dc.contributor.authorMa, D. D. D.
dc.contributor.authorLee, S. T.
dc.contributor.authorLiu, F.
dc.contributor.authorXie, X. C.
dc.date.accessioned2018-09-21T17:51:28Z
dc.date.available2018-09-21T17:51:28Z
dc.date.issued2006-07-24
dc.identifieroksd_lin_intrinsiccurren_2006
dc.identifier.citationLin, X., He, X. B., Yang, T. Z., Guo, W., Shi, D. X., Gao, H.-J., ... Xie, X. C. (2006). Intrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: A conductance transition of ZnO nanowire. Applied Physics Letters, 89(4), Article 043103. https://doi.org/10.1063/1.2234293
dc.identifier.urihttps://hdl.handle.net/11244/301748
dc.description.abstractWe report intrinsic current-voltage properties of ZnO nanowire measured by a four-tip scanning tunneling microscopy (F-STM). It is found that after bending the nanowire with the F-STM the conductance is reduced by about five orders of magnitude. The cathodoluminescent spectra indicate that the ZnO nanowires contain a sizable amount of defects in the surface region, responsible for their conduction. It is suggested that the observed huge conductance changes are caused by the shifting of the surface defect states in the ZnO nanowires in response to the applied surface strain.
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dc.languageen_US
dc.publisherAIP Publishing
dc.rightsThis material has been previously published. In the Oklahoma State University Library's institutional repository this version is made available through the open access principles and the terms of agreement/consent between the author(s) and the publisher. The permission policy on the use, reproduction or distribution of the material falls under fair use for educational, scholarship, and research purposes. Contact Digital Resources and Discovery Services at lib-dls@okstate.edu or 405-744-9161 for further information.
dc.titleIntrinsic current-voltage properties of nanowires with four-probe scanning tunneling microscopy: A conductance transition of ZnO nanowire
osu.filenameoksd_lin_intrinsiccurren_2006.pdf
dc.description.peerreviewPeer reviewed
dc.identifier.doi10.1063/1.2234293
dc.description.departmentPhysics
dc.type.genreArticle
dc.type.materialText


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