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dc.contributor.authorTodd, David Arlen,en_US
dc.date.accessioned2013-08-16T12:23:28Z
dc.date.available2013-08-16T12:23:28Z
dc.date.issued1968en_US
dc.identifier.urihttps://hdl.handle.net/11244/2467
dc.format.extentv, 43 leaves :en_US
dc.subjectEngineering, Electronics and Electrical.en_US
dc.subjectSilicon.en_US
dc.subjectSemiconductors.en_US
dc.titleAn investigation of charge transport mechanisms in evaporated oxide films on etched silicon surfaces /en_US
dc.typeThesisen_US
dc.thesis.degreePh.D.en_US
dc.thesis.degreeDisciplineSchool of Electrical and Computer Engineeringen_US
dc.noteSource: Dissertation Abstracts International, Volume: 29-08, Section: B, page: 2890.en_US
ou.identifier(UMI)AAI6901996en_US
ou.groupCollege of Engineering::School of Electrical and Computer Engineering


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