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Excess Noise Spectral Analysis of Boron Implanted Layers in Silicon

dc.contributor.advisorBilger, Hans R.
dc.contributor.authorTandon, Jawahar Lal
dc.date.accessioned2016-01-08T21:35:27Z
dc.date.available2016-01-08T21:35:27Z
dc.date.issued1973-05-01
dc.identifier.urihttps://hdl.handle.net/11244/23974
dc.formatapplication/pdf
dc.languageen_US
dc.publisherOklahoma State University
dc.rightsCopyright is held by the author who has granted the Oklahoma State University Library the non-exclusive right to share this material in its institutional repository. Contact Digital Library Services at lib-dls@okstate.edu or 405-744-9161 for the permission policy on the use, reproduction or distribution of this material.
dc.titleExcess Noise Spectral Analysis of Boron Implanted Layers in Silicon
dc.typetext
dc.contributor.committeeMemberAllison, Jack
dc.contributor.committeeMemberBasore, Bennett L.
osu.filenameThesis-1973-T163e.pdf
osu.accesstypeOpen Access
dc.description.departmentElectrical Engineering
dc.type.genreThesis


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