| dc.contributor.author | Zhang, W. | |
| dc.contributor.author | Azad, Abul K. | |
| dc.contributor.author | Grischkowsky, D. | |
| dc.date.accessioned | 2015-10-16T20:48:11Z | |
| dc.date.available | 2015-10-16T20:48:11Z | |
| dc.date.issued | 2003-04-28 | |
| dc.identifier | okds_Grischkowsky_APL_2003-04-28 | |
| dc.identifier.citation | Zhang, W., Azad, A. K., & Grischkowsky, D. (2003). Terahertz studies of carrier dynamics and dielectric response of n-type, freestanding epitaxial GaN. Applied Physics Letters, 82(17), 2841-2843. https://doi.org/10.1063/1.1569988 | |
| dc.identifier.uri | https://hdl.handle.net/11244/19872 | |
| dc.description.abstract | We report the characterization of the complex conductivity and dielectric function of GaN by terahertz time-domain spectroscopy. Transmission measurements are performed on an n-type, 180-um-thick, freestanding GaN crystal. Frequency dependent electron dynamics, power absorption and optical dispersion are observed over the frequency range from 0.1 to 4.0 THz. The measured conductivity is well fit by Drude theory. | |
| dc.format | application/pdf | |
| dc.language | en_US | |
| dc.publisher | AIP Publishing | |
| dc.rights | This material has been previously published. In the Oklahoma State University Library's institutional repository this version is made available through the open access principles and the terms of agreement/consent between the author(s) and the publisher. The permission policy on the use, reproduction or distribution of the material falls under fair use for educational, scholarship, and research purposes. Contact Digital Resources and Discovery Services at lib-dls@okstate.edu or 405-744-9161 for further information. | |
| dc.title | Terahertz studies of carrier dynamics and dielectric response of n-type, freestanding epitaxial GaN | |
| osu.filename | okds_Grischkowsky_APL_2003-04-28.pdf | |
| dc.description.peerreview | Peer reviewed | |
| dc.identifier.doi | 10.1063/1.1569988 | |
| dc.description.department | Electrical and Computer Engineering | |
| dc.type.genre | Article | |
| dc.type.material | Text | |
| dc.subject.keywords | ii-v semiconductors | |
| dc.subject.keywords | gallium compounds | |
| dc.subject.keywords | high-speed optical techniques | |
| dc.subject.keywords | optical conductivity | |
| dc.subject.keywords | wide band gap semiconductors | |
