| dc.contributor.author | Jeon, Tae-In | |
| dc.contributor.author | Grischkowsky, D. | |
| dc.date.accessioned | 2015-10-16T20:48:09Z | |
| dc.date.available | 2015-10-16T20:48:09Z | |
| dc.date.issued | 1998-05-04 | |
| dc.identifier | okds_Grischkowsky_APL_1998-05-04 | |
| dc.identifier.citation | Jeon, T.-I., & Grischkowsky, D. (1998). Observation of a Cole-Davidson type complex conductivity in the limit of very low carrier densities in doped silicon. Applied Physics Letters, 72(18), 2259-2261. https://doi.org/10.1063/1.121271 | |
| dc.identifier.uri | https://hdl.handle.net/11244/19863 | |
| dc.description.abstract | Using THz time-domain spectroscopy to measure the complex conductivity of doped silicon from low frequencies to frequencies higher than the THz plasma frequency and the carrier damping rate, we were able to show in the limit of extremely low carrier densities N< I013/cm3, that the Cole-Davidson (C-D) type complex conductivity accurately describes the conductivity of doped silicon. In the low N limit the C-D parameter f3 converges to 0.83 for n-type and 0.70 for p-type silicon. In addition, we have observed a new absorption line at 1.9 THz from an unidentified defect in some of our Czochralski, single-crystal, low-N silicon samples. | |
| dc.format | application/pdf | |
| dc.language | en_US | |
| dc.publisher | AIP Publishing | |
| dc.rights | This material has been previously published. In the Oklahoma State University Library's institutional repository this version is made available through the open access principles and the terms of agreement/consent between the author(s) and the publisher. The permission policy on the use, reproduction or distribution of the material falls under fair use for educational, scholarship, and research purposes. Contact Digital Resources and Discovery Services at lib-dls@okstate.edu or 405-744-9161 for further information. | |
| dc.title | Observation of a Cole-Davidson type complex conductivity in the limit of very low carrier densities in doped silicon | |
| osu.filename | okds_Grischkowsky_APL_1998-05-04.pdf | |
| dc.description.peerreview | Peer reviewed | |
| dc.identifier.doi | 10.1063/1.121271 | |
| dc.description.department | Electrical and Computer Engineering | |
| dc.type.genre | Article | |
| dc.type.material | Text | |
