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dc.contributor.authorRalph, Stephen E.
dc.contributor.authorGrischkowsky, D.
dc.date.accessioned2015-10-16T20:48:08Z
dc.date.available2015-10-16T20:48:08Z
dc.date.issued1992-03-02
dc.identifierokds_Grischkowsky_APL_1992-03-02
dc.identifier.citationRalph, S. E., & Grischkowsky, D. (1992). THz spectroscopy and source characterization by optoelectronic interferometry. Applied Physics Letters, 60(9), 1070-1072. https://doi.org/10.1063/1.106447
dc.identifier.urihttps://hdl.handle.net/11244/19859
dc.description.abstractWe demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high-resistivity GaAs from 1 to 5 THz. The two source THz interferometer is driven with two 4 mW beams of 60 fs dye-laser pulses and produces interferograms with exceptional signal-to-noise ratios.
dc.formatapplication/pdf
dc.languageen_US
dc.publisherAIP Publishing
dc.rightsThis material has been previously published. In the Oklahoma State University Library's institutional repository this version is made available through the open access principles and the terms of agreement/consent between the author(s) and the publisher. The permission policy on the use, reproduction or distribution of the material falls under fair use for educational, scholarship, and research purposes. Contact Digital Resources and Discovery Services at lib-dls@okstate.edu or 405-744-9161 for further information.
dc.titleTHz spectroscopy and source characterization by optoelectronic interferometry
osu.filenameokds_Grischkowsky_APL_1992-03-02.pdf
dc.description.peerreviewPeer reviewed
dc.identifier.doi10.1063/1.106447
dc.description.departmentElectrical and Computer Engineering
dc.type.genreArticle
dc.type.materialText


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