dc.contributor.author | Ralph, Stephen E. | |
dc.contributor.author | Grischkowsky, D. | |
dc.date.accessioned | 2015-10-16T20:48:08Z | |
dc.date.available | 2015-10-16T20:48:08Z | |
dc.date.issued | 1991-10-14 | |
dc.identifier | okds_Grischkowsky_APL_1991-10-14 | |
dc.identifier.citation | Ralph, S. E., & Grischkowsky, D. (1991). Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection. Applied Physics Letters, 59(16), 1972-1974. https://doi.org/10.1063/1.106153 | |
dc.identifier.uri | https://hdl.handle.net/11244/19858 | |
dc.description.abstract | We report extremely large field enhancement near the anode of an electrically biased metal/semi-insulator/metal structure. The large anode field results from a trap-enhanced space-charge region and is large enough to cause injection of holes at the anode. Our numerical simulations confirm this interpretation and show that for typical semi-insulating GaAs, large trap-enhanced fields (TEF) are to be expected. The TEF effect, contrary to that observed in doped materials, is enhanced by optical injection of carriers near the anode, and can be exploited for the efficient generation of ultrafast THz radiation. | |
dc.format | application/pdf | |
dc.language | en_US | |
dc.publisher | AIP Publishing | |
dc.rights | This material has been previously published. In the Oklahoma State University Library's institutional repository this version is made available through the open access principles and the terms of agreement/consent between the author(s) and the publisher. The permission policy on the use, reproduction or distribution of the material falls under fair use for educational, scholarship, and research purposes. Contact Digital Resources and Discovery Services at lib-dls@okstate.edu or 405-744-9161 for further information. | |
dc.title | Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection | |
osu.filename | okds_Grischkowsky_APL_1991-10-14.pdf | |
dc.description.peerreview | Peer reviewed | |
dc.identifier.doi | 10.1063/1.106153 | |
dc.description.department | Electrical and Computer Engineering | |
dc.type.genre | Article | |
dc.type.material | Text | |