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dc.contributor.authorDoany, F. E.
dc.contributor.authorGrischkowsky, D.
dc.date.accessioned2015-10-16T20:48:06Z
dc.date.available2015-10-16T20:48:06Z
dc.date.issued1988-01-04
dc.identifierokds_Grischkowsky_APL_1988-01-04
dc.identifier.citationDoany, F. E., & Grischkowsky, D. (1988). Measurement of ultrafast hot-carrier relaxation in silicon by thin-film-enhanced, time-resolved reflectivity. Applied Physics Letters, 52(1), 36-38. https://doi.org/10.1063/1.99309
dc.identifier.urihttps://hdl.handle.net/11244/19850
dc.description.abstractTime-resolved reflectivity measurements within ~100 fs resolution have revealed an initial 350 fs relaxation time in silicon, believed to be the time it takes hot, photoinjected carriers to relax to the band edge. The measurements were made at low carrier densities (~10^17 cm^-3) for which carrier-carrier processes are negligible, and were facilitated by the greater than order of magnitude enhancement of the change in reflectivity signals that can be produced by the use of thin films.
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dc.languageen_US
dc.publisherAIP Publishing
dc.rightsThis material has been previously published. In the Oklahoma State University Library's institutional repository this version is made available through the open access principles and the terms of agreement/consent between the author(s) and the publisher. The permission policy on the use, reproduction or distribution of the material falls under fair use for educational, scholarship, and research purposes. Contact Digital Resources and Discovery Services at lib-dls@okstate.edu or 405-744-9161 for further information.
dc.titleMeasurement of ultrafast hot-carrier relaxation in silicon by thin-film-enhanced, time-resolved reflectivity
osu.filenameokds_Grischkowsky_APL_1988-01-04.pdf
dc.description.peerreviewPeer reviewed
dc.identifier.doi10.1063/1.99309
dc.description.departmentElectrical and Computer Engineering
dc.type.genreArticle
dc.type.materialText


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