Now showing items 1-2 of 2

    • Carrier dynamics of electrons and holes in moderately doped silicon 

      van Exter, Martin; Grischkowsky, D. (American Physical Society, 1990-06-15)
      A time-domain spectroscopic technique, based on the generation and detection of a collimated beam of subpicosecond broadband terahertz pulses, is used to measure the absorption and dispersion of n- and p-type silicon, with ...
    • Synthesis of ZnO nanocrystals by subsequent implantation of Zn and O species 

      Lee, J. K.; Tewell, C. R.; Schulze, R. K.; Nastasi, M.; Hamby, D. W.; Lucca, D. A.; Jung, H. S.; Hong, K. S. (AIP Publishing, 2005-04-29)
      We report the preparation of ZnO nanocrystals embedded in a SiO2 matrix formed using sequential zinc and oxygen ion implantations. The optical absorption spectra and photoemission spectra of zinc implanted and zinc/oxygen ...