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    • Eu-doped CaF2 grown on Si(100) substrates by molecular beam epitaxy 

      Fang, X. M.; Chatterjee, T.; McCann, P. J.; Liu, W. K.; Santos, M. B.; Shan, W.; Song, J. J. (AIP Publishing, 1995-09-25)
      Eu is incorporated into CaF2 films grown on Si(100) by molecular beam epitaxy using elemental Eu evaporation. Eu doping as high as 4.05 at. % does not significantly degrade the surface morphology, indicating a relatively ...