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Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures
(AIP Publishing, 1996)
Microscopic growth processes associated with GaN/GaAs molecular beam epitaxy (MBE) are examined through the introduction of a first‐order kinetic model. The model is applied to the electron cyclotron resonance microwave ...