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THz spectroscopy and source characterization by optoelectronic interferometry
(AIP Publishing, 1992-03-02)
We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high-resistivity GaAs from 1 to 5 THz. ...
Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection
(AIP Publishing, 1991-10-14)
We report extremely large field enhancement near the anode of an electrically biased metal/semi-insulator/metal structure. The large anode field results from a trap-enhanced space-charge region and is large enough to cause ...