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Electron transport in mesoscopic devices fabricated from indium antimonide/aluminum indium antimonide heterostructures grown by molecular beam epitaxy .
(2004)
Among all binary III-V semiconductors, InSb has the highest intrinsic electron mobility, the narrowest band gap, and the smallest electron effective mass (m* = 0.0139m0). These characteristics make InSb quantum wells (QWs) ...