Search
Now showing items 1-3 of 3
SPIN-ORBIT COUPLING EFFECTS IN InSb QUANTUM WELL STRUCTURES
(2009)
Indium antimonide (InSb) is a narrow band gap material which has the smallest electron effective mass (0.014m0) and the largest electron Lande g-facture (-51) of all the III-V semiconductors. Spin-orbit effects of III-V ...
SPIN-ORBIT COUPLING EFFECTS IN InSb QUANTUM WELL STRUCTURES
(2009)
Indium antimonide (InSb) is a narrow band gap material which has the smallest electron effective mass (0.014m0) and the largest electron Lande g-facture (-51) of all the III-V semiconductors. Spin-orbit effects of III-V ...
InSb QUANTUM WELL STRUCTURES FOR ELECTRONIC DEVICE APPLICATIONS
(2009)
The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, ...