Development of a 5V Digital Cell Library for use with the Peregrine Semiconductor Silicon-on-Sapphire Process

Abstract

The scope of the thesis work presented here is to develop a standard digital cell library operable at 5V of power supply and up to the temperatures of 125C using Peregrine 0.5m2 3.3V CMOS process. Peregrine 0.5m process was selected as a result of its availability via commercial foundry at moderate cost radiation and high temperature tolerant properties. Testing data was obtained showing no measurable gate tunneling at gate voltages below 8.5V and no source to drain avalanche below 5.5V ensuring safe operation below the 5V design corners of 5.5V. Device geometries are selected to meet drive current requirement of 1mA and acceptable Ion/Ioff ratios at high temperature. Layouts for cells, schematic, symbolic and abstract views were generated. Timing, power and area characterization data is realized in several formats compatible with Cadence and Synopsys synthesizer, place & route and simulation tools. A test chip for delay chains with single input and multi-input combinatorial gates were designed and fabricated as a part of the validation on silicon. Measured data at room temperature is well in agreement with SignalStorm's data. At 125C, delay chains performed faster in silicon by up to 25% as compared with simulated data obtained using typical model. Device characteristics for rn and rp device are obtained and percentage variations in their Id-Vd characteristics with models are calculated. Variation in test data for the test chip as compared to the simulated data is observed to be consistent with the device current variation plotted across process corners. Adherence of the targeted design specifications (from simulation) with the actual measured values verifies the cell library's functionality, timing and power parameters.