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Theoretical and experimental investigation of IV-VI mid-infrared multiple quantum wells vertical cavity surface emitting lasers.
(2003)
Lateral mode suppression techniques other than reduction of pump spot size need to be developed. Air-post pillar structure and electrically pumped configuration certainly need to be investigated.
Characterization of IV-VI semiconductor materials and devices by Fourier transform infrared spectroscopy.
(1999)
Emissions from a commercial IV-VI semiconductor PbEuSe diode laser were also obtained using a modular type MR spectrometer. The laser exhibits wide (up to 4 cm-1) continuous wave, single-mode tuning regions between 90 K ...