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Molecular beam epitaxial growth and characterization of europium-doped calcium fluoride and fabrication of visible electroluminescent devices on silicon.
(1998)
An indirect band-gap precludes the possibility of efficient luminescence from Si. The widespread use of Si in electronics and rapid advances in Si device processing and design justifies the search for Si-based light emitters ...
Characterization of IV-VI semiconductor materials and devices by Fourier transform infrared spectroscopy.
(1999)
Emissions from a commercial IV-VI semiconductor PbEuSe diode laser were also obtained using a modular type MR spectrometer. The laser exhibits wide (up to 4 cm-1) continuous wave, single-mode tuning regions between 90 K ...
GROWTH OF WIDE BANDGAP SEMICONDUCTORS USING PULSED ELECTRON BEAM DEPOSITION (PED) PROCESS
(2015)
Wide bandgap materials hold a great potential in solid state lighting, power electronics, and radio frequency (RF) device applications. The cumulative market for all these applications is forecasted to be approximately $75 ...