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IV-VI semiconductor structures for laser fabrication of silicon.
(1998)
This dissertation describes experiments undertaken to develop techniques required to develop IV-VI lasers grown on silicon. A review of the IV-VI materials system, diode laser structures, recent IV-VI laser results, epitaxial ...
Molecular beam epitaxial growth and characterization of europium-doped calcium fluoride and fabrication of visible electroluminescent devices on silicon.
(1998)
An indirect band-gap precludes the possibility of efficient luminescence from Si. The widespread use of Si in electronics and rapid advances in Si device processing and design justifies the search for Si-based light emitters ...
Characterization of IV-VI semiconductor materials and devices by Fourier transform infrared spectroscopy.
(1999)
Emissions from a commercial IV-VI semiconductor PbEuSe diode laser were also obtained using a modular type MR spectrometer. The laser exhibits wide (up to 4 cm-1) continuous wave, single-mode tuning regions between 90 K ...