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IV-VI semiconductor structures for laser fabrication of silicon.
(1998)
This dissertation describes experiments undertaken to develop techniques required to develop IV-VI lasers grown on silicon. A review of the IV-VI materials system, diode laser structures, recent IV-VI laser results, epitaxial ...
Development of a thermoelectrically cooled IV-VI semiconductor diode laser using epitaxial lift-off techniques.
(1997)
A potential solution to the operating temperature problem is to employ epitaxial lift-off techniques in order to transfer the semiconductor device from its thermally resistive substrate to copper, a superior thermal ...