Search
Now showing items 1-3 of 3
IV-VI semiconductor structures for laser fabrication of silicon.
(1998)
This dissertation describes experiments undertaken to develop techniques required to develop IV-VI lasers grown on silicon. A review of the IV-VI materials system, diode laser structures, recent IV-VI laser results, epitaxial ...
Molecular beam epitaxial growth and characterization of europium-doped calcium fluoride and fabrication of visible electroluminescent devices on silicon.
(1998)
An indirect band-gap precludes the possibility of efficient luminescence from Si. The widespread use of Si in electronics and rapid advances in Si device processing and design justifies the search for Si-based light emitters ...
Impurity scattering in a two-dimensional electron gas subject to a perpendicular magnetic field.
(1998)
We have calculated the Landau level (projected) Green's functions and the density of states of a two-dimensional electron gas in a perpendicular magnetic field as effected by impurity scattering using several different ...