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IV-VI LEAD SALT MID-INFRARED LIGHT EMITTING DEVICE DESIGN, FABRICATION AND CHARACTERIZATIONIV-VI LEAD SALT MID-INFRARED LIGHT EMITTING DEVICE DESIGN, FABRICATION AND CHARACTERIZATION
(2009)
The research detailed by this dissertation has demonstrated the design, fabrication, and characterization of lead salt semiconductor mid-infrared light emitting devices. A scrupulous theoretical model has been described ...
Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb
(2013)
In this work the electronic properties of n-type and p-type quantum wells (QWs) made of narrow gap InSb and InGaAs materials have been studied experimentally. The narrower band gap in these materials leads to smaller ...
SPIN-ORBIT COUPLING EFFECTS IN InSb QUANTUM WELL STRUCTURES
(2009)
Indium antimonide (InSb) is a narrow band gap material which has the smallest electron effective mass (0.014m0) and the largest electron Lande g-facture (-51) of all the III-V semiconductors. Spin-orbit effects of III-V ...
SPIN-ORBIT COUPLING EFFECTS IN InSb QUANTUM WELL STRUCTURES
(2009)
Indium antimonide (InSb) is a narrow band gap material which has the smallest electron effective mass (0.014m0) and the largest electron Lande g-facture (-51) of all the III-V semiconductors. Spin-orbit effects of III-V ...
InSb QUANTUM WELL STRUCTURES FOR ELECTRONIC DEVICE APPLICATIONS
(2009)
The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, ...
MBE GROWTH AND CHARACTERIZATION OF Pb-SALT SEMICONDUCTORS FOR MID-INFRARED DETECTOR AND LASER APPLICATION
(2009)
IV-VI semiconductors grown by molecular beam epitaxy (MBE) on various substrates are extensively attractive for mid-infrared optoelectronic device application. The main goal of this research is to improve device performance ...